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Phys. Rev. B 67, 134114 (2003) [5 pages]

Molecular dynamics study of the threshold displacement energy in vanadium

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L. A. Zepeda-Ruiz*, S. Han, D. J. Srolovitz, and R. Car
Princeton Materials Institute, Princeton University, Princeton, New Jersey 08544

B. D. Wirth
Chemistry and Materials Science Directorate, Lawrence Livermore National Laboratory, P.O. Box 808, L-353, Livermore, California 94550

See Also: Erratum

Received 27 September 2002; revised 27 January 2003; published 28 April 2003

The threshold displacement energy (TDE) is calculated for vanadium as a function of temperature and orientation by molecular dynamics simulations. The TDE varies from 13 to 51 eV, depending on orientation and is nearly temperature independent between 100 and 900 K. The lowest TDE is in the 〈100〉 direction. We characterize the defects associated with the displacement simulations and found that they consist of vacancies and 〈111〉-split dumbbells.

© 2003 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevB.67.134114
DOI:
10.1103/PhysRevB.67.134114
PACS:
61.80.Az, 61.72.Ji, 61.82.Bg

*Present address: Chemistry and Materials Science Directorate, Lawrence Livermore National Laboratory, P.O. Box 808, L-353, Livermore, California 94550.

See Also

Erratum: L. A. Zepeda-Ruiz, S. Han, D. J. Srolovitz, R. Car, and B. D. Wirth, Erratum: Molecular dynamics study of the threshold displacement energy in vanadium [Phys. Rev. B 67, 134114 (2003)], Phys. Rev. B 70, 109901 (2004).