Phys. Rev. B 67, 115329 (2003) [8 pages]Influence of mutual drag of the carrier-phonon system on the thermopower and transverse Nernst-Ettingshausen effectReceived 10 December 2001; revised 4 November 2002; published 24 March 2003 The thermopower and Nernst-Ettingshausen (NE) effect in degenerate semiconductors and semimetals placed in high electric and magnetic fields are calculated by taking into account the heating of both electrons and phonons as well as their thermal and mutual drags. The magnetic and electric field dependences of the thermoelectric power and the transverse NE voltage are found in analytical forms. It is shown that in weak and high transverse magnetic fields, the electronic and phonon parts of the NE coefficients change their sign for some scattering mechanisms. © 2003 The American Physical Society URL:
http://link.aps.org/doi/10.1103/PhysRevB.67.115329
DOI:
10.1103/PhysRevB.67.115329
PACS:
72.15.Jf, 72.20.Pa
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