Phys. Rev. B 66, 045316 (2002) [5 pages]Discontinuous tracks in arsenic-doped crystalline Si0.5Ge0.5 alloy layersReceived 27 December 2001; published 22 July 2002 We report the observation of tracks in single-crystalline Si0.5Ge0.5 alloy layers irradiated with 1.3-GeV U ions in the electronic stopping-power regime. Transmission electron microscopy in both conventional and high-resolution mode reveals more or less discontinuous tracks depending on the composition of the Si1-xGex alloy and on the arsenic doping level. The morphology and the atomic structure of the tracks are analyzed. The results are discussed in the frame of the thermal-spike approach which assumes both track melting and imperfect crystallization. © 2002 The American Physical Society URL:
http://link.aps.org/doi/10.1103/PhysRevB.66.045316
DOI:
10.1103/PhysRevB.66.045316
PACS:
81.07.-b, 61.80.Jh, 61.46.+w, 61.72.Qq
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