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Phys. Rev. B 66, 033301 (2002) [3 pages]

Transport in molecular transistors: Symmetry effects and nonlinearities

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S. N. Rashkeev1, M. Di Ventra2, and S. T. Pantelides1,3
1Department of Physics and Astronomy, Vanderbilt University, Nashville, Tennessee 37235
2Department of Physics, Virginia Polytechnic Institute and State University, Blacksburg, Virginia 24061-0435
3Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831

Received 29 April 2002; published 16 July 2002

We report first-principles calculations of the current-voltage and current-gate-field characteristics of model molecular transistors to explore the factors that control current amplification and other properties. We show that both the position and amplitude of resonant peaks are modified by the use of substituents that affect the symmetry and dipole moments of the molecules, and allow a linear versus nonlinear Stark effect. In addition, strong nonlinearities arise at large source-drain currents.

© 2002 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevB.66.033301
DOI:
10.1103/PhysRevB.66.033301
PACS:
73.40.Jn, 73.40.Cg, 73.40.Gk, 85.65.+h