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Phys. Rev. B 66, 214106 (2002) [9 pages]

Characteristic creep behavior of nanocrystalline metals found for high-density gold

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S. Sakai1,*, H. Tanimoto1,3, E. Kita2,3, and H. Mizubayashi1,†
1Institute of Materials Science, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
2Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
3Center for Tsukuba Advanced Research Alliance, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan

Received 27 June 2002; revised 7 October 2002; published 18 December 2002

Nanocrystalline (n) Au specimens with a density of 19.4±0.2g/cm3 and a mean grain size of about 20 nm were prepared below 300 K by the gas deposition method, where two types of n-Au specimens were obtained as a function of a deposition rate, the type-H specimens above 800 nm/s and the type-L specimens below 800 nm/s. The anelastic and the plastic creep responses are similar qualitatively but different quantitatively between the type-H and type-L specimens. The anelastic strain ɛan,GB, associated with the grain boundary (GB) regions, increases linearly with (T-Tan1)(σap-σan1), when the temperature T is higher than a threshold temperature Tan1 of 200 K and the applied stress σap is higher than a threshold stress, σan1, of a few MPa. The ratio of ɛan,GB to the elastic strain is as large as 1.1 for the type-H specimens and 0.2 for the type-L specimens at 320 K for σapσan1. The activation energy for the GB anelastic process is 0.2 eV. We surmise that cooperative motions of many atoms in the GB regions are responsible for ɛan,GB, and both Tan1 and σan1 show a distribution depending on the number of atoms associated. The plastic creep rate ɛ vs σap data show a letter S-like curve. We classified the creep response into three categories, region I for the linear creep rate region for σap between σpc1 and σpc2, region II for the transient creep rate region for σap between σpc2 and σpc3, and region III for the saturation creep rate region for σap between σpc3 and σy. The threshold stresses σpc1 and σpc2 and the yield stress σy are about 30, 150, and 360 MPa for the type-H specimens, and about 60, 300, and 500 MPa for the type-L specimens, respectively. σpc3 is slightly lower than σy. From scanning tunneling microscopy images, we surmise that the localized GB slip takes place in region I, and the mean separation between the localized GB slips decreases with increasing σap in region II and becomes comparable with the mean grain size in region III. The plastic creep in region III may be explained by the Ashby creep. The present view for the creep behavior explains the low-temperature creep behavior of fcc n metals.

© 2002 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevB.66.214106
DOI:
10.1103/PhysRevB.66.214106
PACS:
62.25.+g, 62.20.Hg, 62.20.Dc, 61.46.+w

*Present address: Takasaki-branch, Advanced Science Research Center, Japan Atomic Energy Research Institute, Watanuki, Takasaki 370-1292, Japan.

Author to whom correspondence should be addressed. Email address: mizuh@ims.tsukuba.ac.jp