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Phys. Rev. B 66, 201403(R) (2002) [4 pages]

Effects of the narrow band gap on the properties of InN

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J. Wu1,2, W. Walukiewicz2,*, W. Shan2, K. M. Yu2, J. W. Ager, III2, E. E. Haller2,3, Hai Lu4, and William J. Schaff4
1Applied Science and Technology Graduate Group, University of California, Berkeley, California 94720
2Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720
3Department of Materials Science and Engineering, University of California, Berkeley, California 94720
4Department of Electrical and Computer Engineering, Cornell University, Ithaca, New York 14853

Received 12 September 2002; published 27 November 2002

Infrared reflection experiments were performed on wurtzite InN films with a range of free-electron concentrations grown by molecular-beam epitaxy. Measurements of the plasma edge frequencies were used to determine electron effective masses. The results show a pronounced increase in the electron effective mass with increasing electron concentration, indicating a nonparabolic conduction band in InN. We have also found a large Burstein-Moss shift of the fundamental band gap. The observed effects are quantitatively described by the k⋅p interaction within the two-band Kane model of narrow-gap semiconductors.

© 2002 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevB.66.201403
DOI:
10.1103/PhysRevB.66.201403
PACS:
78.66.Fd, 78.30.-j

*Electronic address: w_walukiewicz@lbl.gov

 
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