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Phys. Rev. B 66, 165407 (2002) [12 pages]

Sintering of two-dimensional nanoclusters in metal(100) homoepitaxial systems: Deviations from predictions of Mullins continuum theory

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Da-Jiang Liu1 and J. W. Evans1,2
1Ames Laboratory–USDOE, Iowa State University, Ames, Iowa 50011
2Department of Mathematics, Iowa State University, Ames Iowa 50011

Received 23 October 2001; revised 18 January 2002; published 8 October 2002

We present a comparison of the predictions of atomistic and continuum models for the sintering of pairs of near-square two-dimensional nanoclusters adsorbed on the (100) surface in fcc metal homoepitaxial systems. Mass transport underlying these processes is dominated by periphery diffusion (PD) of adatoms along the edge of the clusters. A Mullins-type continuum model for cluster evolution incorporates anisotropy in the step edge stiffness (reflecting the energetics and adsorption site lattice structure in the atomistic model), and can also account for anisotropy in the step edge mobility (reflecting details of the kinetics). In such continuum treatments, the characteristic time τeq for relaxation of clusters with linear size of order L satisfies τeqL4. Deviations may generally be expected for small sizes L or low temperatures T. However, for the relaxation of dumbbell-shaped clusters (formed by corner-to-corner coalescence of square clusters), atomistic simulations for PD with no kink rounding barrier (δ=0) reveal that τeqL4 always applies. In contrast, atomistic simulations with a large kink rounding barrier (δ>0) reveal distinct scaling with τeqL3, for low T or small L, thus providing an effective way to test for δ>0. For the relaxation of faceted rectangular clusters (formed by side-to-side coalescence of square clusters), atomistic simulations for PD with δ=0 reveal that τeqL2, for low T or small L. This is consistent with a recent proposal by Combe and Larralde. For large δ>0, τeq has an even weaker dependence on L. We elucidate scaling behavior and the effective activation barrier for relaxation in terms of the individual atomistic PD processes and their barriers.

© 2002 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevB.66.165407
DOI:
10.1103/PhysRevB.66.165407
PACS:
68.35.Fx, 68.35.Bs, 68.35.Md