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Phys. Rev. B 66, 161307(R) (2002) [4 pages]

Ultrahigh field electron cyclotron resonance absorption in In1-xMnxAs films

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M. A. Zudov* and J. Kono†
Department of Electrical and Computer Engineering, Rice Quantum Institute
Center for Nanoscale Science and Technology, Rice University, Houston, Texas 77005

Y. H. Matsuda‡, T. Ikaida, and N. Miura
Institute for Solid State Physics, University of Tokyo, Kashiwa, Chiba 277-8581, Japan

H. Munekata
Imaging Science and Engineering Laboratory, Tokyo Institute of Technology, Yokohama, Kanagawa 226-8503, Japan

G. D. Sanders, Y. Sun, and C. J. Stanton
Department of Physics, University of Florida, Gainesville, Florida 32611

Received 3 July 2002; published 8 October 2002

We have carried out an ultrahigh-field cyclotron resonance study of n-type In1-xMnxAs films, with Mn composition x ranging from 0% to 12%, grown on GaAs by low-temperature molecular-beam epitaxy. We observe that the electron cyclotron resonance peak shifts to lower field with increasing x. A detailed comparison of experimental results with calculations based on a modified Pidgeon-Brown model allows us to estimate the s-d and p-d exchange-coupling constants, α and β, for this important III-V dilute magnetic semiconductor system.

© 2002 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevB.66.161307
DOI:
10.1103/PhysRevB.66.161307
PACS:
76.40.+b, 75.50.Pp, 71.70.Di, 72.25.-b

*Present address: Physics Department, University of Utah, Salt Lake City, Utah 84112.

†To whom correspondence should be addressed. Electronic address: kono@rice.edu; http://www.ece.rice.edu/∼kono

‡Present address: Department of Physics, Faculty of Science, Okayama University, Okayama, Japan.

 
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