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APS » Journals » Phys. Rev. B » Volume 66 » Issue 16
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Phys. Rev. B 66, 161303(R) (2002) [4 pages]

Shot noise in self-assembled InAs quantum dots

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A. Nauen1,*, I. Hapke-Wurst1, F. Hohls1, U. Zeitler1, R. J. Haug1, and K. Pierz2
1Institut für Festkörperphysik, Universität Hannover, Appelstraße 2, D-30167 Hannover, Germany
2Physikalisch-Technische Bundesanstalt, Bundesallee 100, D-38116 Braunschweig, Germany

Received 10 July 2002; published 4 October 2002

We investigate the noise properties of a GaAs-AlAs-GaAs tunneling structure with embedded self-assembled InAs quantum dots in the single-electron tunneling regime. We analyze the dependence of the relative noise amplitude of the shot noise on bias voltage. We observe a nonmonotonic behavior of the Fanofactor α with an average value of α≈0.8 consistent with the asymmetry of the tunneling barriers. Reproducible fluctuations observed in α can be attributed to the successive participation of more and more InAs quantum dots in the tunneling current.

© 2002 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevB.66.161303
DOI:
10.1103/PhysRevB.66.161303
PACS:
73.63.Kv, 73.40.Gk, 72.70.+m

*Electronic address: nauen@nano.uni-hannover.de

 
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