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Phys. Rev. B 66, 125408 (2002) [4 pages]

Layer intermixing during metal/metal oxide adsorption: Ti/sapphire(0001)

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C. Verdozzi1, P.A. Schultz2, Ruqian Wu1,3, A.H. Edwards4, and Nicholas Kioussis1
1Department of Physics, California State University Nortridge, Nortridge California 91330
2Sandia National Laboratories, Albuquerque, New Mexico 87185-1413
3Department of Physics and Astronomy, University of California, Irvine California 92697-4575
4Air Force Research Laboratory, Kirtland AFB, New Mexico 87117-5776

Received 5 July 2002; published 26 September 2002

First principles density functional calculations for adsorption of Ti on Al2O3(0001) indicate that Ti:Al2O3(0001) interfaces become intermixed. Substitutional Ti replaces a surface Al atom rather than a subsurface Al, and the Al-terminated surface is unstable under Ti adsorption. Adsorbed Ti displaces the surface Al, resulting in a mixed Ti/Al interfacial layer instead of a sharp Ti:Al2O3 interface. Our results provide a coherent picture of the structural and electronic properties of this interface and are consistent with available experimental data.

© 2002 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevB.66.125408
DOI:
10.1103/PhysRevB.66.125408
PACS:
71.15.Mb, 68.35.Ct, 68.35.Dv, 82.65.+r