Phys. Rev. B 66, 125320 (2002) [5 pages]Laser-induced electronic desorption of Si atoms from Si(111)-(7×7)Received 29 April 2002; published 30 September 2002 Desorption of Si atoms from Si(111)-(7×7) induced by femtosecond laser excitation has been studied by means of resonance ionization spectroscopy. The desorption yield shows a strong superlinear dependence on the excitation intensity, similar to the case of nanosecond laser excitation, however, femtosecond excitation enhances the yield strongly. The mechanism of Si-atom desorption from this surface is discussed based on these results. © 2002 The American Physical Society URL:
http://link.aps.org/doi/10.1103/PhysRevB.66.125320
DOI:
10.1103/PhysRevB.66.125320
PACS:
79.20.La, 61.80.Ba, 68.35.Bs, 78.66.Db
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