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Phys. Rev. B 65, 064102 (2002) [8 pages]

Energetics of hydrogen impurities in aluminum and their effect on mechanical properties

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Gang Lu, Daniel Orlikowski, Ickjin Park, Olivier Politano, and Efthimios Kaxiras
Department of Physics and Division of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138

Received 6 September 2001; published 3 January 2002

The effects of hydrogen impurities in the bulk and on the surface of aluminum are theoretically investigated. Within the framework of density-functional theory, we have obtained the dependence on H concentration of the stacking fault energy, the cleavage energy, the Al/H surface energy, and the Al/H/Al interface formation energy. The results indicate a strong dependence of the slip energy barrier in the [2¯11] direction, the cleavage energy in the [111] direction and the Al/H/Al interface formation energy, on H concentration and on tension. The dependence of the Al/H surface energy on H coverage is less pronounced, while the optimal H coverage is ⩽0.25 ML. The calculated activation energy for diffusion between high-symmetry sites in the bulk and on the surface is practically the same, 0.167 eV. From these results, we draw conclusions about the possible effect of H impurities on mechanical properties and, in particular, on their role in embrittlement of Al.

© 2002 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevB.65.064102
DOI:
10.1103/PhysRevB.65.064102
PACS:
61.72.Qq, 61.72.Nn, 66.30.Fq