Phys. Rev. B 65, 249902(E) (2002) [1 pages]Erratum: Energetic, vibrational, and electronic properties of silicon using a nonorthogonal tight-binding model [Phys. Rev. B 62, 4477 (2000)]Received 29 March 2002; published 28 May 2002 © 2002 The American Physical Society URL:
http://link.aps.org/doi/10.1103/PhysRevB.65.249902
DOI:
10.1103/PhysRevB.65.249902
PACS:
71.15.Nc, 71.15.Ap, 71.20.Mq, 99.10.+g
See AlsoOriginal Article: N. Bernstein, M. J. Mehl, D. A. Papaconstantopoulos, N. I. Papanicolaou, Martin Z. Bazant, and Efthimios Kaxiras, Energetic, vibrational, and electronic properties of silicon using a nonorthogonal tight-binding model, Phys. Rev. B 62, 4477 (2000). |
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