Phys. Rev. B 65, 233311 (2002) [4 pages]Structure analysis of the Ga-stabilized GaAs(001)-c(8×2) surface at high temperaturesReceived 10 January 2002; revised 12 March 2002; published 31 May 2002 The structure of the Ga-stabilized GaAs(001)-c(8×2) surface has been studied using rocking-curve analysis of reflection high-energy electron diffraction (RHEED). The c(8×2) structure emerges at temperatures higher than 600 °C, but is unstable with respect to the change to the (2×6)/(3×6) structure at lower temperatures. Our RHEED rocking-curve analysis at high temperatures revealed that the c(8×2) surface has the structure which is basically the same as that recently proposed by Kumpf et al. [Phys. Rev. Lett. 86, 3586 (2001)]. We found that the surface atomic configurations are locally fluctuated at high temperatures without disturbing the c(8×2) periodicity. © 2002 The American Physical Society URL:
http://link.aps.org/doi/10.1103/PhysRevB.65.233311
DOI:
10.1103/PhysRevB.65.233311
PACS:
68.35.Bs, 61.14.Hg
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