Phys. Rev. B 65, 184108 (2002) [4 pages]Alphabet luminescence lines in 4H-SiCReceived 5 February 2002; published 7 May 2002 First-principles density functional calculations are used to investigate antisite pairs in 4H-SiC. We show that they are likely to be formed in close proximity under ionizing conditions, and they possess a donor level and thermal stability consistent with the series of 40 photoluminescent lines called the alphabet lines. Moreover, the gap vibrational mode of the silicon antisite defect is close to a phonon replica of the b1 line and possesses a weak isotopic shift with 13C in agreement with observation. © 2002 The American Physical Society URL:
http://link.aps.org/doi/10.1103/PhysRevB.65.184108
DOI:
10.1103/PhysRevB.65.184108
PACS:
61.72.Ji, 61.80.Az, 63.20.Pw, 71.55.-i
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