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Phys. Rev. B 65, 155320 (2002) [7 pages]

Control of the dipole domain propagation in a GaAs/AlAs superlattice with a high-frequency field

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E. Schomburg*, K. Hofbeck, R. Scheuerer, M. Haeussler, and K. F. Renk
Institut für Angewandte Physik, Universität Regensburg, Universitätsstrasse 31, D-93040 Regensburg, Germany

A.-K. Jappsen, A. Amann, A. Wacker, and E. Schöll
Institut für Theoretische Physik, Technische Universität Berlin, Hardenbergstrasse 36, D-10623 Berlin, Germany

D. G. Pavel’ev and Yu. Koschurinov
Department of Radiophysics, Nizhny Novgorod State University, Nizhny Novgorod, Russia

Received 5 July 2001; revised 15 October 2001; published 4 April 2002

We observed that the propagation of a dipole domain in a GaAs/AlAs superlattice can be controlled by an external high-frequency field. The doped GaAs/AlAs superlattice showed a negative differential conductance giving rise to propagating dipole domains. Depending on the frequency of the high-frequency field, either frequency-locked or quasiperiodic propagating domain states occurred. The behavior can be described by a “devil’s staircase,” where in the locked state the ratio of the external frequency and the domain transit frequency is a rational number. A theoretical analysis indicates that the high-frequency field controls the domain propagation by a modification of both the domain velocity and the shedding of the domains from the cathode.

© 2002 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevB.65.155320
DOI:
10.1103/PhysRevB.65.155320
PACS:
72.20.Ht, 73.50.Fq, 73.61.Ey, 85.30.Fg

*Electronic address: ekkehard.schomburg@physik.uni-regensburg.de