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Phys. Rev. B 65, 155101 (2002) [6 pages]

Electronic structure and metal-insulator transition in LaNiO3-δ

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M. Abbate1, G. Zampieri2, F. Prado2, A. Caneiro2, J. M. Gonzalez-Calbet3, and M. Vallet-Regi4
1Departamento de Física, Universidade Federal de Paraná, Caixa Postal 19091, 81531-990 Curitiba PR, Brazil
2Centro Atómico Bariloche, Comisión Nacional de Energia Atómica, 8400 Bariloche, Rio Negro, Argentina
3Facultad de Química, Universidad Complutense, 28040, Madrid, Spain
4Facultad de Farmacia, Universidad Complutense, 28040, Madrid, Spain

Received 11 September 2001; published 18 March 2002

We studied the changes in the electronic structure of LaNiO3-δ across the metal-insulator transition. The technique used in the study was mainly O1s x-ray absorption spectroscopy (XAS). The experimental spectrum of LaNiO3.00 was analyzed in terms of a cluster-model calculation. The spectrum of LaNiO3.00 presents a sharp peak at a threshold that corresponds to 3d8Ḻc̱3d9 transitions. Analysis of this peak indicates that the charge carriers in LaNiO3.00 contain considerable oxygen character. The intensity of this peak decreases in the spectrum of LaNiO2.75 and disappears almost completely for LaNiO2.50. This suggests that the metal-insulator transition is related to the disappearance of the charge carriers and the ensuing band-gap opening. The peak in the LaNiO2.75 compound is split due to the presence of two nonequivalent crystallographic sites. The metal-insulator transition in this compound is tentatively attributed to potential disorder between these two sites.

© 2002 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevB.65.155101
DOI:
10.1103/PhysRevB.65.155101
PACS:
78.70.Dm, 71.30.+h