Phys. Rev. B 65, 115325 (2002) [5 pages]Binding energy of charged excitons bound to interface defects of semiconductor quantum wellsReceived 9 October 2001; published 8 March 2002 We present a model that takes into account the interface-defects contribution to the binding energy of charged excitons (trions). We use Gaussian defect potentials and one-particle Gaussian basis set. All the Hamiltonian defect terms are analytically calculated for the s-like trial wave functions. The dependence of the binding energy and of the trion size on the quantum-well width and on the defect size are investigated using a variational method for GaAs/Al0.3Ga0.7As quantum wells. We show that even in the case of strictly structural defects the trion is more strongly affected than the exciton. © 2002 The American Physical Society URL:
http://link.aps.org/doi/10.1103/PhysRevB.65.115325
DOI:
10.1103/PhysRevB.65.115325
PACS:
68.35.Dv, 73.20.Mf, 73.21.Fg
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