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Phys. Rev. B 64, 064506 (2001) [7 pages]

Electronic structure of CeRhIn5: de Haas–van Alphen and energy band calculations

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Donavan Hall1, E. C. Palm1, T. P. Murphy1, S. W. Tozer1, C. Petrovic1,*, Eliza Miller-Ricci1,†, Lydia Peabody1,‡, Charis Quay Huei Li1,§, U. Alver2, R. G. Goodrich2, J. L. Sarrao3, P. G. Pagliuso3, J. M. Wills4, and Z. Fisk1
1National High Magnetic Field Laboratory, Florida State University, Tallahassee, Florida 32310
2Department of Physics and Astronomy, Louisiana State University, Baton Rouge, Louisiana 70803
3Los Alamos National Laboratory, MST-10, Los Alamos, New Mexico 87545
4Los Alamos National Laboratory, T-1, Los Alamos, New Mexico 87545

Received 22 November 2000; published 19 July 2001

The de Haas–van Alphen effect and energy-band calculations are used to study angular-dependent extremal areas and effective masses of the Fermi surface of the highly correlated antiferromagnetic material CeRhIn5. The agreement between experiment and theory is reasonable for the areas measured with the field applied along the (100) axis of the tetragonal structure, but there is disagreement in size for the areas observed with the field applied along the (001) axis where the antiferromagnetic spin alignment is occurring. Detailed comparisons between experiment and theory are given.

© 2001 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevB.64.064506
DOI:
10.1103/PhysRevB.64.064506
PACS:
71.18.+y, 71.27.+a

*Present address: Ames Laboratory, U. S. Department of Energy and Department of Physics and Astronomy, Iowa State University, Ames, Iowa 50011.

†Present address: EMR, Middlebury College, Middlebury, VT 05753.

‡LP, Smith College, Northampton, MA 01063.

§CQHL, Mount Holyoke College, South Hedley, MA 01075.

 
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