Phys. Rev. B 64, 233202 (2001) [4 pages]Interstitial-carbon defects in Si1-xGexSee Also: Erratum Received 6 September 2001; published 27 November 2001 The interstial-carbon (Ci) defect in molecular-beam epitaxy grown, strain relaxed n-or p-type Si1-xGex for 0<~x<~0.50 has been created by 2-MeV proton or electron irradiations, and studied by deep-level transient spectroscopy on p+n- and n+p-mesa diodes. The energy difference between the shallow acceptor and donor levels of the Ci defect remains at a constant value of 0.8 eV as the Ge content is varied. The migration enthalpy of Ci is independent of composition in the composition range 0<~x<~0.15. The observed increased stability of the Ci defect with increasing x is the result of a decrease in the entropy of the process. © 2001 The American Physical Society URL:
http://link.aps.org/doi/10.1103/PhysRevB.64.233202
DOI:
10.1103/PhysRevB.64.233202
PACS:
72.20.Jv, 61.72.Ji, 95.75.Wx
See AlsoErratum: A. Nylandsted Larsen, A. Bro Hansen, D. Reitze, J.-J. Goubet, J. Fage-Pedersen, and A. Mesli, Erratum: Interstitial-carbon defects in Si1-xGex [Phys. Rev. B 64, 233202 (2001)], Phys. Rev. B 65, 209901 (2002). |
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