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Phys. Rev. B 64, 155311 (2001) [5 pages]

Temperature dependence of Fano line shapes in a weakly coupled single-electron transistor

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I. G. Zacharia, D. Goldhaber-Gordon*, G. Granger, M. A. Kastner, and Yu. B. Khavin
Department of Physics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139

Hadas Shtrikman, D. Mahalu, and U. Meirav
Braun Center for Submicron Research, Weizmann Institute of Science, Rehovot, Israel 76100

Received 5 September 2000; revised 4 June 2001; published 18 September 2001

We report the temperature dependence of the zero-bias conductance of a single-electron transistor in the regime of weak coupling between the quantum dot and the leads. The Fano line shape, convoluted with thermal broadening, provides a good fit to the observed asymmetric Coulomb charging peaks. However, the width of the peaks increases more rapidly than expected from the thermal broadening of the Fermi distribution in a temperature range for which Fano interference is unaffected. The intrinsic width of the resonance extracted from the fits increases approximately quadratically with temperature. Above about 600 mK the asymmetry of the peaks decreases, suggesting that phase coherence necessary for Fano interference is reduced.

© 2001 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevB.64.155311
DOI:
10.1103/PhysRevB.64.155311
PACS:
73.23.Hk, 72.15.Qm, 73.23.-b

*Current address: Harvard University, Department of Physics and Society of Fellows, 17 Oxford Street, Cambridge, MA 02138.

Email address: mkastner@mit.edu