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Phys. Rev. B 63, 085316 (2001) [5 pages]

Atomic-resolution incoherent high-angle annular dark field STEM images of Si(011)

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K. Watanabe1, T. Yamazaki2, Y. Kikuchi3, Y. Kotaka3, M. Kawasaki4, I. Hashimoto2, and M. Shiojiri5,6
1Tokyo Metropolitan College of Technology, 1-10-40 Higashiohi, Tokyo 140-0011, Japan
2Department of Physics, Science University of Tokyo, 1-3 Kagurazaka, Tokyo 162-8601, Japan
3Materials & Materials Engineering Laboratories, Fujitsu Laboratories Ltd., 10-1, Morinosato-Wakamiya, Atsugi 243-0197, Japan
4JEOL U.S.A., Inc. Massachusetts 01960
5Department of Anatomy, Kanazawa Medical University, Ishikawa 920-0293, Japan
6Kyoto Institute of Technology, Kyoto 606-8585, Japan

Received 15 May 2000; revised 11 September 2000; published 6 February 2001

Characteristic atomic-resolution incoherent high-angle annular dark field (HAADF) scanning transmission electron microscope (STEM) images of [011]-orientated Si have been experimentally obtained by a through-focal series. Artificial bright spots appear at positions where no atomic columns exist along the electron beam, in some experimental images. Image simulation, based on the Bloch wave description by the Bethe method, reproduces the through-focal experimental images. It is shown that atomic-resolution HAADF STEM images, which are greatly influenced by the Bloch wave field depending on the incident electron beam probe, cannot always be interpreted intuitively as the projected atomic images. It is also found that the atomic-resolution HAADF STEM images can be simply explained using the relations to the probe functions without the need for complex dynamical simulations.

© 2001 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevB.63.085316
DOI:
10.1103/PhysRevB.63.085316
PACS:
61.66.-f, 68.37.Lp