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APS » Journals » Phys. Rev. B » Volume 63 » Issue 23
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Phys. Rev. B 63, 235307 (2001) [8 pages]

Ideal unreactive metal/semiconductor interfaces: The case of Zn/ZnSe(001)

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S. Rubini, E. Pelucchi, M. Lazzarino, D. Kumar*, and A. Franciosi†
Laboratorio Nazionale TASC-INFM, Area Science Park, Building MM, S.S. 14, Km. 163.5, I-34012 Trieste, Italy

C. Berthod‡, N. Binggeli, and A. Baldereschi§
Institut de Physique Appliquée, Ecole Polytechnique Fédérale de Lausanne, CH-1015 Lausanne, Switzerland

Received 21 December 2000; published 18 May 2001

Zn/ZnSe(001) interfaces fabricated by metal deposition at room temperature onto ZnSe(001) c(2×2), 2×1, and 1×1 surfaces were studied by means of x-ray photoemission spectroscopy and current-voltage and capacitance-voltage measurements. All junctions exhibited an ideal unreactive behavior and an identical Schottky barrier height of 1.85 eV (for p-type conduction). Ab initio pseudopotential calculations for model interface configurations provide a microscopic explanation of the different behavior of Zn/ZnSe junctions as compared to Al/ZnSe and Au/ZnSe junctions.

© 2001 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevB.63.235307
DOI:
10.1103/PhysRevB.63.235307
PACS:
73.40.Ns, 73.30.+y, 79.60.Jv, 81.15.Hi

*Present address: Electronic Science Department, Kurukshetra University, 136119 India.

†Also with Dipartimento di Fisica, Università di Trieste, I-34127 Trieste, Italy.

‡Present address: DPMC, Université de Genève, 24 Quai Ernest-Ansermet, 1221 Genève 4, Switzerland.

§Also with Dipartimento di Fisica Teorica and INFM, Università di Trieste, I-34014 Trieste, Italy.

 
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