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Phys. Rev. B 63, 220401(R) (2001) [4 pages]

Using electronic structure changes to map the H-T phase diagram of α-NaV2O5

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A. B. Sushkov and J. L. Musfeldt
Department of Chemistry, University of Tennessee, Knoxville, Tennessee 37996

S. A. Crooker
National High Magnetic Field Laboratory, MS E536, Los Alamos, New Mexico 87545

J. Jegoudez and A. Revcolevschi
Laboratoire de Physicochimie de l’Etat Solide, Université de Paris-Sud, Bâtiment 414, F-91405 Orsay, France

Received 20 December 2000; published 26 April 2001

We report polarized optical reflectance studies of α-NaV2O5 as a function of temperature (4–45 K) and magnetic field (0–60 T). Rung directed electronic structure changes, as measured by near-infrared reflectance ratios ΔR(H)=R(H)/R(H=0 T), are especially sensitive to the phase boundaries. We employ these changes to map out an H-T phase diagram. Topological highlights include the observation of an additional phase boundary slightly below TSG, enhanced curvature of the 34 K phase boundary above 35 T, and, surprisingly, strong hysteresis effects of both transitions with applied field.

© 2001 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevB.63.220401
DOI:
10.1103/PhysRevB.63.220401
PACS:
75.30.-m, 78.20.Ls, 78.67.-n, 75.50.-y