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Phys. Rev. B 63, 195317 (2001) [5 pages]

Electronic structure of beryllium acceptors confined in GaAs/AlxGa1-xAs quantum wells

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Q. X. Zhao1, S. Wongmanerod2, M. Willander1, P. O. Holtz2, S. M. Wang3, and M. Sadeghi3
1Physical Electronics and Photonics, Department of Microelectronics and Nanoscience, Chalmers University of Technology and Göteborg University, S-412 96 Göteborg, Sweden
2Department of Physics, Linköping University of Technology, S-583 81 Linköping, Sweden
3Department of Microelectronics, Microwave Electronics Laboratory, Chalmers University of Technology and Göteborg University, S-412 96 Göteborg, Sweden

Received 5 September 2000; revised 27 November 2000; published 26 April 2001

A detailed experimental investigation is presented of beryllium acceptors confined in GaAs/AlxGa1-xAs quantum well structures in the presence of an applied magnetic field. A number of features related to the transitions between the acceptor ground and excited states are reported: (1) the satellites corresponding to the 1S-2S acceptor transition involving the different components [j=3/2(Γ8) and j=5/2(Γ7,8)] of the acceptor bound exciton (BE), where the labels of the exciton states are according to j-j coupling theory (or the cubic crystal-field scheme); (2) the detailed splitting of the 1S3/2(Γ6)-2S3/2(Γ6) acceptor transition involving the lowest acceptor BE state j=5/2(Γ7,8); and (3) a component of the 1S-2P acceptor transition. In addition to this, the magnetic field dependence of these transitions is investigated experimentally, and the results are compared with theoretical predictions based on existing theory.

© 2001 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevB.63.195317
DOI:
10.1103/PhysRevB.63.195317
PACS:
73.20.Hb, 78.20.Ls, 78.55.Cr, 78.66.Fd