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Phys. Rev. B 63, 193306 (2001) [4 pages]

Ultrafast x-ray measurement of laser heating in semiconductors: Parameters determining the melting threshold

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A. Cavalleri*, C. W. Siders†, C. Rose-Petruck‡, R. Jimenez§, Cs. Tóth**, J. A. Squier, C. P. J. Barty††, and K. R. Wilson‡‡
The University of California San Diego, 9500 Gilman Drive, La Jolla, California, 92093-0339

K. Sokolowski-Tinten, M. Horn von Hoegen, and D. von der Linde
Institut für Laser- und Plasmaphysik, Universität Essen, D-45117 Essen, Germany

Received 19 December 2000; published 27 April 2001

The pulse-width dependence of thermal melting and ablation thresholds in germanium and gallium arsenide is correlated to direct, ultrafast x-ray measurements of laser-heated depths. The heating dynamics, determined by the interplay of nonlinear optical absorption, delayed Auger heating, and high-density carrier diffusion, explain the scaling laws of thermal melting thresholds in different semiconductors.

© 2001 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevB.63.193306
DOI:
10.1103/PhysRevB.63.193306
PACS:
78.47.+p, 64.70.Dv, 87.64.Bx

*Present address: Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, CA. Email: acavalleir@lbl.gov

†Present address: The School of Optics/CREOL, The University of Central Florida, Orlando, Florida.

‡Present address: Department of Chemistry, Brown University, Providence, Rhode Island.

§Present address: The Scripps Research Institute, La Jolla, California.

**Present address: The Center for Beam Physics, Lawrence Berkeley National Laboratory, Berkeley, California.

††Present address: Lawrence Livermore National Laboratory, Livermore California.

‡‡Deceased.

 
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