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APS » Journals » Phys. Rev. B » Volume 63 » Issue 16
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Phys. Rev. B 63, 161309(R) (2001) [4 pages]

Enhanced phonon-assisted absorption in single InAs/GaAs quantum dots

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A. Lemaître, A. D. Ashmore, J. J. Finley, D. J. Mowbray, and M. S. Skolnick
Department of Physics and Astronomy, University of Sheffield, Sheffield S3 7RH, United Kingdom

M. Hopkinson
Department of Electronic and Electrical Engineering, University of Sheffield, Sheffield S1 3JD, United Kingdom

T. F. Krauss
Department of Physics and Astronomy, University of St Andrews, St Andrews KY16 9SS, United Kingdom

Received 6 December 2000; revised 22 February 2001; published 6 April 2001

Exciton-longitudinal optic-phonon coupling in InAs/GaAs quantum dots is investigated by means of single-dot spectroscopy. Photoluminescence spectra in the excitonic ground-state region exhibit a series of new emission lines which we ascribe to single exciton recombination perturbed by charged defects close to the dot. Compared to unperturbed excitonic recombination, the resulting dipole in these complexes leads to enhanced coupling to LO phonons in photoluminescence excitation spectra. Evidence for resonant enhancement of phonon-assisted processes in absorption is also presented.

© 2001 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevB.63.161309
DOI:
10.1103/PhysRevB.63.161309
PACS:
71.35.-y, 73.21.-b, 85.35.Be
 
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