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Phys. Rev. B 63, 161305(R) (2001) [4 pages]

Observation of multicharged excitons and biexcitons in a single InGaAs quantum dot

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J. J. Finley, P. W. Fry, A. D. Ashmore, A. Lemaître, A. I. Tartakovskii, R. Oulton, D. J. Mowbray, and M. S. Skolnick
Department of Physics and Astronomy, University of Sheffield, Sheffield S3 7RH, United Kingdom

M. Hopkinson
Department of Electronic and Electrical Engineering, University of Sheffield, Sheffield S1 3JD, United Kingdom

P. D. Buckle
DERA, St. Andrews Road, Malvern, Worcs. WR14 3PS, United Kingdom

P. A. Maksym
Department of Physics and Astronomy, University of Leicester, Leicester LE1 7RH, United Kingdom

Received 18 December 2000; revised 6 February 2001; published 5 April 2001

The effects of excess electron occupation on the optical properties of excitons (X) and biexcitons (2X) in a single self-assembled InGaAs quantum dot are investigated. The behavior of X and 2X differ strongly as the number of excess electrons is varied with the biexciton being much more weakly perturbed as a result of its filled s-shell ground state, a direct manifestation of shell-filling effects. Good correlation is found between charging thresholds observed from s-shell recombination perturbed by p-shell occupation, and direct observation of p-shell recombination.

© 2001 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevB.63.161305
DOI:
10.1103/PhysRevB.63.161305
PACS:
73.21.-b, 78.55.Cr, 78.66.-w
 
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