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Phys. Rev. B 63, 125208 (2001) [7 pages]

Raman electron paramagnetic resonance in Zn1-xCoxTe and Cd1-xCoxTe

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M. J. Seong, H. Alawadhi, I. Miotkowski, and A. K. Ramdas
Department of Physics, Purdue University, West Lafayette, Indiana 47907

S. Miotkowska
Institute of Physics, Polish Academy of Sciences, AL. Lotnikow 32/46, 02-668 Warsaw, Poland

Received 27 July 2000; published 13 March 2001

Electronic Raman transitions due to the spin flip of the 3d electrons of Co2+ in Zn1-xCoxTe and Cd1-xCoxTe(x<~0.01) are observed at ħωPM=g(Co2+)μBH with g(Co2+)=2.295±0.010 and 2.310±0.002, respectively. The intensity of Raman electron paramagnetic resonance (Raman-EPR) shows strong resonant enhancement when the incident or scattered photon energy coincides with that of a Zeeman component of the free exciton. Under resonant conditions, the Raman spectra display “ZnTe-like” (or “CdTe-like”) and “CoTe-like” longitudinal optical (LO) phonons in combination with the spin-flip transitions, a consequence of the Fröhlich interaction. In Zn1-xCoxTe, even the ZnTe-like TO phonon exhibited EPR sidebands but mediated by the deformation potential; the large p-d spin-spin exchange interaction in Co2+-based II-VI diluted magnetic semiconductors is the underlying microscopic mechanism.

© 2001 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevB.63.125208
DOI:
10.1103/PhysRevB.63.125208
PACS:
78.30.Fs, 75.50.Pp, 76.30.Fc