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Phys. Rev. B 62, 2188–2194 (2000)

Fano resonances in electronic transport through a single-electron transistor

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J. Göres*, D. Goldhaber-Gordon†, S. Heemeyer, and M. A. Kastner‡
Department of Physics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139

Hadas Shtrikman, D. Mahalu, and U. Meirav
Braun Center for Submicron Research, Weizmann Institute of Science, Rehovot, Israel 76100

Received 27 December 1999; revised 15 March 2000; published in the issue dated 15 July 2000

We have observed asymmetric Fano resonances in the conductance of a single-electron transistor resulting from interference between a resonant and a nonresonant path through the system. The resonant component shows all the features typical of single-electron addition to the confined droplet within the transistor, but the origin of the nonresonant path is unclear. A feature of this experimental system, compared to others that show Fano line shapes, is that changing the voltages on various gates allows one to alter the interference between the two paths.

© 2000 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevB.62.2188
DOI:
10.1103/PhysRevB.62.2188
PACS:
73.23.Hk, 72.15.Qm, 73.23.-b

*Present address: Max-Planck-Institut für Festkörperforschung, Heisenbergstraße 1, 70569 Stuttgart, Germany.

†Present address: Harvard University, Department of Physics and Society of Fellows, 17 Oxford Street, Cambridge MA 02138.

‡Electronic address: mkastner@mit.edu

 
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