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Phys. Rev. B 62, 2118–2125 (2000)

Surface roughening in shadowing growth and etching in 2+1 dimensions

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Jason T. Drotar, Y.-P. Zhao, T.-M. Lu, and G.-C. Wang
Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, New York 12180-3590

Received 18 October 1999; published in the issue dated 15 July 2000

Through numerical calculations and Monte Carlo simulations, we examine the roughening behavior of a shadowing model, with lateral growth, for (2+1)-dimensional systems. The results show that the roughening growth exponent β=1 for growth and β=0 for etching. For the Monte Carlo simulation of the growth model, tall columns are formed, and the correlation length obeys ξ(t-t0)1/z, with 1/z=0.93±0.1. For the Monte Carlo simulation of the etching model, we obtain 1/z=0, and the height-height correlation function H(r) is proportional to log(r) for rξ. The results are compared to previous computational studies of shadowing and to experimental studies of sputter deposition.

© 2000 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevB.62.2118
DOI:
10.1103/PhysRevB.62.2118
PACS:
68.35.Ct, 05.10.-a, 05.40.-a, 05.45.-a