Phys. Rev. B 62, 1568–1571 (2000)Dynamics of carrier tunneling between vertically aligned double quantum dotsReceived 31 January 2000; published in the issue dated 15 July 2000 We have directly measured carrier tunneling times between vertically aligned double quantum dots (QD’s) using time-resolved photoluminescence measurement. The vertically aligned double QD structure consists of In0.9Al0.1As QD’s, a GaAs barrier layer, and InAs QD’s. The tunneling times were measured for the three different barrier thicknesses. The dependence of the tunneling time on the barrier thickness is in agreement with the Wentzel-Kramers-Brillouin approximation. The nonresonant tunneling rate between QD’s is found to be suppressed to one-tenth of the tunneling rate between quantum wells. © 2000 The American Physical Society URL:
http://link.aps.org/doi/10.1103/PhysRevB.62.1568
DOI:
10.1103/PhysRevB.62.1568
PACS:
73.40.Gk, 72.10.Di, 78.47.+p
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