corner
corner
APS » Journals » Phys. Rev. B » Volume 62 » Issue 16
< Previous Article | Next Article >

Phys. Rev. B 62, R10622–R10625 (2000)

Koster-Slater model for the interface-state problem

Download: PDF (112 kB) Buy this article Export: BibTeX or EndNote (RIS)

M. Di Ventra*, C. Berthod, and N. Binggeli
Institut de Physique Appliquée, Ecole Polytechnique Fédérale de Lausanne, CH-1015 Lausanne, Switzerland

Received 1 May 2000; published in the issue dated 15 October 2000

A Koster-Slater approach to the problem of localized states at semiconductor interfaces has been developed. It allows us to relate the existence and/or the energy position of interface states to some essential bulk features of the constituent materials and some interface-bonding parameters. The condition for the existence of localized states and the relevance of the model will be discussed comparing the predictions entailed by the latter with the results of ab initio calculations on the Ge/GaAs (110) interface.

© 2000 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevB.62.R10622
DOI:
10.1103/PhysRevB.62.R10622
PACS:
73.20.At, 73.40.Ty

*Present address: Department of Physics, Virginia Polytechnic Institute and State University, Blacksburg, Virginia, 24061.

 
< Previous Article | Next Article >