Phys. Rev. B 62, 7110–7115 (2000)Pressure-induced distortion of the β-Sn phase in silicon: Effects of nonhydrostaticityReceived 26 February 1999; revised 24 January 2000; published in the issue dated 15 September 2000 Studies of phase transitions under pressure usually assume perfect hydrostatic conditions but it is far from being true in practice. Theoretical calculations based on a tight-binding model prove that nonhydrostatic conditions can significantly reduce the Si II to Si XI transition pressure. This distortion induced by nonhydrostaticity was already observed in high-pressure experiments (in the case of GaSb and InSb), and so this work is the theoretical confirmation of the possibility of such a phenomenon. © 2000 The American Physical Society URL:
http://link.aps.org/doi/10.1103/PhysRevB.62.7110
DOI:
10.1103/PhysRevB.62.7110
PACS:
61.50.Ks, 62.50.+p, 64.60.-i, 64.70.Kb
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