corner
corner

Phys. Rev. B 61, R5117–R5120 (2000)

Surface-state transitions of Si(111)-7×7 probed using nonlinear optical spectroscopy

Download: PDF (80 kB) Buy this article Export: BibTeX or EndNote (RIS)

Takanori Suzuki*
The Institute of Physical and Chemical Research (Riken) Wako, Saitama 351-0198, Japan

Received 21 September 1999; published in the issue dated 15 February 2000

Surface second-harmonic generation of Si(111)-7×7 at RT reveals two surface-state transitions at 1.2 and 1.4 eV fundamental photon energies, in addition to the well-known two-photon resonance at 3.3 eV. A detailed analysis of the temperature-dependent spectral profile, combined with a separate sum-frequency generation and its gas-exposure measurement, attributes the 1.4-eV peak to the one-photon S2-U1 transition and the 1.2-eV peak to the two photon S3-U1 transition at 2.4 eV, which are fully consistent with the existing data on the surface states.

© 2000 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevB.61.R5117
DOI:
10.1103/PhysRevB.61.R5117
PACS:
78.66.-w, 73.20.-r, 42.65.An, 42.65.Ky

*FAX: 048-462-4652. Electronic address: tsuzuki@postman.riken.go.jp