Phys. Rev. B 61, 4461–4464 (2000)Solution of the Poisson-Schrödinger problem for a single-electron transistorReceived 21 July 1999; revised 7 October 1999; published in the issue dated 15 February 2000 An outstanding problem of a quantitative description of electronic properties of a vertical gated quantum dot has been solved by a self-consistent approach to the Poisson and Schrödinger equations. We have calculated the confinement potential and determined the conditions for single-electron tunneling. A good agreement with experiment has been obtained for the 12 single-electron current peaks as a function of gate voltage Vg for source-drain voltage Vsd=0, the bounds on diamond-shaped regions in the Vg-Vsd plane, for which the flow of current is blocked; and the current-gate voltage characteristics in an external magnetic field. © 2000 The American Physical Society URL:
http://link.aps.org/doi/10.1103/PhysRevB.61.4461
DOI:
10.1103/PhysRevB.61.4461
PACS:
73.20.Dx, 73.40.Gk
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