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Phys. Rev. B 61, 16883–16889 (2000)

Stoichiometry and adhesion of Nb/Al2O3

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W. Zhang
Princeton Materials Institute, Princeton University, Princeton, New Jersey 08540

J. R. Smith
Delphi Research Labs, Warren, Michigan 48090

Received 14 February 2000; published in the issue dated 15 June 2000

We examine the relative stability of both stoichiometric and nonstoichiometric Nb/Al2O3 interfaces and Al2O3 surfaces. Results of first-principles computations of surface and interfacial atomic relaxations, electron-density distributions, and total energies are presented. We found that while the Al-terminated Al2O3(0001) surface is stable relative to the O-terminated surface, interface formation with Nb can reverse the stability, depending on the oxygen partial pressure. This interfacial structure is consistent with recent experimental results. Finally, we computed some of the energetics associated with the diffusion of Al into Nb across the Nb/Al2O3 interface. Our results are consistent with Al migration into the Nb at temperatures of the order of 103K, as reported experimentally.

© 2000 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevB.61.16883
DOI:
10.1103/PhysRevB.61.16883
PACS:
68.35.-p, 68.35.Gy, 73.20.-r