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Phys. Rev. B 61, 16659–16666 (2000)

Weakly bound carbon-hydrogen complex in silicon

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L. Hoffmann, E. V. Lavrov*, and B. Bech Nielsen
Institute of Physics and Astronomy, Aarhus University, DK-8000 Aarhus C, Denmark

B. Hourahine and R. Jones
Department of Physics, University of Exeter, Exeter EX4 4QL, United Kingdom

S. Öberg
Department of Mathematics, Luleå University of Technology, S-95187 Luleå, Sweden

P. R. Briddon
Department of Physics, The University of Newcastle upon Tyne, Newcastle upon Tyne NE1 7RU, United Kingdom

Received 1 February 2000; published in the issue dated 15 June 2000

Local vibrational modes of a weakly bound carbon-hydrogen complex in silicon have been identified with infrared-absorption spectroscopy. After implantation of protons at ∼20 K and subsequent annealing at 180 K, two carbon modes at 596 and 661 cm-1, and one hydrogen mode at 1885 cm-1 are observed. The three modes originate from the same complex, which is identified as bond-centered hydrogen in the vicinity of a nearby substitutional carbon atom. Ab initio theory has been applied to calculate the structure and local modes of carbon-hydrogen complexes with hydrogen located at the first, second, and third nearest bond-center site to substitutional carbon. The results support our assignment.

© 2000 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevB.61.16659
DOI:
10.1103/PhysRevB.61.16659
PACS:
63.20.Pw, 61.72.Ji, 78.30.Am, 61.72.Bb

*Permanent address: Institute of Radioengineering and Electronics of RAS, Mokhovaya 11, 103907 Moscow, Russia.

 
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