Phys. Rev. B 61, 11136–11138 (2000)Second harmonic generation in hydrogenated amorphous siliconReceived 6 December 1999; published in the issue dated 15 April 2000 The first application of the second harmonic generation (SHG) technique to investigate the structure of a-Si:H films is reported. Dependence of SHG on the type of substrate material and the temperature during deposition has been observed. The origin of SHG is discussed. A stress model is proposed to explain the experimental results. It is suggested that the second harmonic is generated in a strained layer close to the substrate. © 2000 The American Physical Society URL:
http://link.aps.org/doi/10.1103/PhysRevB.61.11136
DOI:
10.1103/PhysRevB.61.11136
PACS:
81.05.Gc, 42.65.Ky, 71.55.Jv
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