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Phys. Rev. B 61, 9906–9909 (2000)

Intragap states in SmB6

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N. E. Sluchanko, V. V. Ġlushkov, B. P. Gorshunov*, S. V. Demishev, M. V. Kondrin, A. A. Pronin, and A. A. Volkov
General Physics Institute, Russian Academy of Sciences, Vavilov Strasse 38, 117942, Moscow, Russia

A. K. Savchenko
Physics Department, University of Exeter, Stocker Road, Exeter EX4 4QL, United Kingdom

G. Grüner
Department of Physics and Solid State Science Center, University of California at Los Angeles, Los Angeles, California 90024

Y. Bruynseraede and V. V. Moshchalkov
Laboratory voor Vaste-Stoffysica en Magnetisme, K. U. Leuven, Celestijnenlaan 200, B-3001 Leuven, Belgium

S. Kunii
Department of Physics, Tohoku University, Sendai 980, Japan

Received 14 September 1999; published in the issue dated 15 April 2000

The results of wide-range measurements of the low-frequency, rf, and microwave conductivity in the typical mixed-valent narrow-gap semiconductor samarium hexaboride are presented. The established steplike anomaly of conductivity σ(ν) around 10 GHz is discussed in the framework of the exciton-polaron approach and coherent-state formation in SmB6 at helium temperatures. A combined analysis of the dc- and wide-range ac-transport characteristics and dielectric permittivity data at low temperatures is developed.

© 2000 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevB.61.9906
DOI:
10.1103/PhysRevB.61.9906
PACS:
71.28.+d, 71.35.-y

*Present address: 1 Physikalisches Institut, Universitaet Stuttgart, D-70550 Stuttgart, Germany.

 
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