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Phys. Rev. B 61, 7305–7307 (2000)

Improvement in electrical and dielectric behavior of (Ba,Sr)TiO3 thin films by Ag doping

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Anuranjan Srivastava, D. Kumar*, and Rajiv K. Singh
Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611-6400

Harish Venkataraman and William R. Eisenstadt
Department of Electrical and Computer Engineering, University of Florida, Gainesville, Florida 32611

Received 27 September 1999; published in the issue dated 15 March 2000

In this paper, we report the fabrication and characterization of Ag/(Ba,Sr)TiO3/LaNiO3/LaAlO3 capacitors. All the films, including the top (silver) and bottom (LaNiO3) electrodes, were deposited using a pulsed laser deposition technique. The electrical and dielectric properties of (Ba,Sr)TiO3 capacitors were found to improve significantly by means of silver doping. For example, the leakage current density of a Ag/Ag-doped (Ba,Sr)TiO3/LaNiO3/capacitor was about an order of magnitude lower and the dielectric constant was ∼40% higher than that of a Ag/(Ba,Sr)TiO3/LaNiO3/capacitor over a range of biases. The improvement in the electrical properties of (Ba,Sr)TiO3 films is believed to be caused by a double role of silver. The first one is associated with the reduced oxygen vacancies due to improved oxygenation of BST films in the presence of silver, and the second one is associated with the unpinning effect of domain walls again in the presence of silver.

© 2000 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevB.61.7305
DOI:
10.1103/PhysRevB.61.7305
PACS:
68.55.Ln, 73.61.-r, 77.55.+f, 81.15.Fg

*Author to whom correspondence should be addressed. Electronic address: dkuma@mse.ufl.edu

 
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