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APS » Journals » Phys. Rev. B » Volume 60 » Issue 4
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Phys. Rev. B 60, R2173–R2176 (1999)

Magnetic semiconductor quantum wells in high fields to 60 Tesla: Photoluminescence linewidth annealing at magnetization steps

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S. A. Crooker and D. G. Rickel
National High Magnetic Field Laboratory, MS E536, Los Alamos, New Mexico 87545

S. K. Lyo
Sandia National Laboratory, P.O. Box 5800, MS-1415, Albuquerque, New Mexico 87185

N. Samarth
Department of Physics, Pennsylvania State University, University Park, Pennsylvania 16802

D. D. Awschalom
Department of Physics, University of California, Santa Barbara, California 93106

Received 17 March 1999; published in the issue dated 15 July 1999

Magnetic semiconductors offer a unique possibility for strongly tuning the intrinsic alloy disorder potential with applied magnetic field. We report the direct observation of a series of steplike reductions in the magnetic alloy disorder potential in single ZnSe/Zn(Cd, Mn)Se quantum wells between 0 and 60 T. This disorder, measured through the linewidth of low-temperature photoluminescence spectra, drops abruptly at ∼19, 36, and 53 T, in concert with observed magnetization steps. Conventional models of alloy disorder (developed for nonmagnetic semiconductors) reproduce the general shape of the data, but markedly underestimate the size of the linewidth reduction.

© 1999 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevB.60.R2173
DOI:
10.1103/PhysRevB.60.R2173
PACS:
71.35.Ji, 75.50.Pp, 78.55.Et, 75.60.Nt
 
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