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Phys. Rev. B 60, 16463–16474 (1999)

Structure and electronic properties of amorphous WO3

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G. A. de Wijs and R. A. de Groot
Electronic Structure of Materials, Research Institute of Materials, Faculty of Sciences, Toernooiveld 1, NL-6525 ED Nijmegen, The Netherlands

Received 14 May 1999; revised 27 July 1999; published in the issue dated 15 December 1999

The structure and electronic structure of amorphous WO3 were studied with first-principles density-functional calculations. Upon amorphization, a large increase of the band gap is observed. The empty states exhibit a tendency towards localization. We studied the filling of these states as induced by addition of an alkali metal (Na) or removal (“deficiency”) of O. Na addition does not affect the structure much, and results in a filling of the lower part of the conduction-band continuum. Oxygen removal can induce large structural relaxations, which can give rise to the formation of W-W dimers (bond length <3.0Å) and corresponding in-gap states. We suggest a reinterpretation of the nature of the active species in the intervalence charge-transfer mechanism that is believed to explain the electrochromic behavior of thin-film amorphous tungsten bronzes.

© 1999 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevB.60.16463
DOI:
10.1103/PhysRevB.60.16463
PACS:
61.43.Dq, 71.23.Cq, 71.55.Jv