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Phys. Rev. B 60, 13780–13785 (1999)

X-ray study of strains and dislocation density in epitaxial Cu/Ni/Cu/Si(001) films

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K. Ha, M. Ciria, and R. C. O’Handley
Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139

P. W. Stephens and S. Pagola
Department of Physics and Astronomy, State University of New York, Stony Brook, New York 11794-3800

Received 16 April 1999; revised 12 August 1999; published in the issue dated 15 November 1999

The strain state of epitaxial Cu(50 Å)/Ni(tNi)/Cu(2000 Å)/Si(001) films as a function of the nickel film thickness (30Å<~tNi<~2000Å) has been studied using Bragg diffraction and grazing-incidence diffraction with a synchrotron x-ray source. For 30Å<~tNi<~150Å both the in-plane and out-of-plane nickel strains show a phenomenological (1/t)2/3 power dependence, which is significantly different from the 1/t law commonly accepted in the literature. The Matthews’ theory, including the effect of the copper capping layer, is used to account for the equilibrium strains of the nickel layer. The 500 and 2000 Å films show larger strains than that predicted by the theory, consistent with other studies. The ratio of the nickel in-plane to out-of-plane strains is -1.18±0.05, very close to the expected nickel bulk value of -2c12/c11=-1.28.

© 1999 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevB.60.13780
DOI:
10.1103/PhysRevB.60.13780
PACS:
61.10.Eq, 61.72.Lk, 75.70.Ak