Phys. Rev. B 60, 11540–11544 (1999)Electronic structure of quantum spheres with wurtzite structureReceived 4 June 1999; published in the issue dated 15 October 1999 The hole effective-mass Hamiltonian for the semiconductors with wurtzite structure is given. The effective-mass parameters are determined by fitting the valence-band structure near the top with that calculated by the empirical pseudopotential method. The energies and corresponding wave functions are calculated with the obtained effective-mass Hamiltonian for the CdSe quantum spheres, and the energies as functions of sphere radius R are given for the zero spin-orbital coupling (SOC) and finite SOC cases. The energies do not vary as 1/R2 as the general cases, which is caused by the crystal-field splitting energy and the linear terms in the Hamiltonian. It is found that the ground state is not the optically active S state for the R smaller than 30 Å , in agreement with the experimental results and the “dark exciton” theory. © 1999 The American Physical Society URL:
http://link.aps.org/doi/10.1103/PhysRevB.60.11540
DOI:
10.1103/PhysRevB.60.11540
PACS:
73.61.Ga, 78.66.Hf
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