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Phys. Rev. B 60, 11540–11544 (1999)

Electronic structure of quantum spheres with wurtzite structure

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Jian-Bai Xia and Jingbo Li
China Center for Advanced Science and Technology (World Laboratory), P.O. Box 8730, Beijing 100080, People’s Republic of China
National Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, People’s Republic of China

Received 4 June 1999; published in the issue dated 15 October 1999

The hole effective-mass Hamiltonian for the semiconductors with wurtzite structure is given. The effective-mass parameters are determined by fitting the valence-band structure near the top with that calculated by the empirical pseudopotential method. The energies and corresponding wave functions are calculated with the obtained effective-mass Hamiltonian for the CdSe quantum spheres, and the energies as functions of sphere radius R are given for the zero spin-orbital coupling (SOC) and finite SOC cases. The energies do not vary as 1/R2 as the general cases, which is caused by the crystal-field splitting energy and the linear terms in the Hamiltonian. It is found that the ground state is not the optically active S state for the R smaller than 30Å , in agreement with the experimental results and the “dark exciton” theory.

© 1999 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevB.60.11540
DOI:
10.1103/PhysRevB.60.11540
PACS:
73.61.Ga, 78.66.Hf