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Phys. Rev. B 6, 3800–3804 (1972)

Frequency- and Wave-Vector-Dependent Dielectric Function for Ge, GaAs, and ZnSe

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S. J. Sramek and Marvin L. Cohen
Department of Physics, University of California, Berkeley, California 94720 and Inorganic Materials Research Division, Lawrence Berkeley Laboratory, Berkeley, California 94720

Received 30 June 1972; published in the issue dated 15 November 1972

The frequency- and wave-vector-dependent dielectric function for Ge, GaAs, and ZnSe is calculated from the electronic band structures obtained by the empirical-pseudopotential method. The results show the effect of increasing ionicity on the dielectric function. The results also yield the plasmon dispersion relation ω(q) for the three semiconductors. The frequency- and wave-vector-dependent Penn dielectric function is calculated and compared with the results for Ge.

© 1972 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevB.6.3800
DOI:
10.1103/PhysRevB.6.3800
PACS: