corner
corner
APS » Journals » Phys. Rev. B » Volume 59 » Issue 8
< Previous Article | Next Article >

Phys. Rev. B 59, R5308–R5311 (1999)

Indium segregation effects in (111)B-grown (In,Ga)As/GaAs piezoelectric quantum wells

Download: PDF (108 kB) Buy this article Export: BibTeX or EndNote (RIS)

Philippe Ballet*, Pierre Disseix, Joël Leymarie, Aimé Vasson, and Anne-Marie Vasson
Laboratoire des Sciences et Matériaux pour l’Electronique, et d’Automatique, UMR 6602 du CNRS, Université Blaise Pascal Clermont-Ferrand II, 63177 Aubière Cedex, France

Robert Grey
Department of Electronic and Electrical Engineering, University of Sheffield, Mappin Street, Sheffield S1 3JD, United Kingdom

Received 12 August 1998; published in the issue dated 15 February 1999

The effect of indium surface segregation on electronic states and excitonic properties is investigated experimentally and theoretically in (111)B-grown (In,Ga)As/GaAs strained piezoelectric quantum wells. Thermally detected optical absorption and electroreflectance experiments are performed on two samples grown by molecular beam epitaxy and containing 7 and 14 wells. Excitonic energies and oscillator strengths are calculated by a variational method within the effective mass approximation. The influence of indium segregation on the piezoelectric field strength and the oscillator strength of excitonic transitions is analyzed.

© 1999 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevB.59.R5308
DOI:
10.1103/PhysRevB.59.R5308
PACS:
73.20.Dx, 77.65.Ly

*Present address: 222 Physics Department, The University of Arkansas, Fayetteville, AR 72701. FAX: (501) 575-4580. Electronic address: pballet@comp.uark.edu

 
< Previous Article | Next Article >