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Phys. Rev. B 59, 5847–5856 (1999)

Dehydrogenation and the surface phase transition on diamond (111): Kinetics and electronic structure

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J. B. Cui, J. Ristein, and L. Ley
Institute of Technical Physics, University of Erlangen-Nürnberg, Erwin-Rommel-Strasse 1, D-91058 Erlangen, Germany

Received 27 July 1998; revised 8 September 1998; published in the issue dated 15 February 1999

The (1×1) to (2×1) surface phase transition of the hydrogen-covered diamond (111) surface is investigated by core level spectroscopy, low-energy electron diffraction, and measurements of the electron affinity. The latter method is shown to be a reliable measure of the hydrogen coverage. Prolonged annealing of the surface at 1000 K converts the hydrogen-terminated (1×1) structure with an electron affinity of -1.27 eV to a hydrogen-free (2×1) reconstruction, increases the separation of valence-band maximum from the Fermi level EF from 0.68 to 0.88 eV, and results in a positive electron affinity of +0.38 eV. Annealing the surface at high temperature (up to 1400 K) yields the same (2×1) surface structure albeit with an increase in the separation of the valence-band maximum from EF to 1.42 eV and a positive electron affinity of 0.8 eV which is associated with a partial surface graphitization. An analysis of the kinetics of the thermally induced hydrogen desorption yields an activation energy of 1.25±0.2eV. It was found that hydrogen desorption and reconstruction are surface phase transitions which are not directly linked. Instead, an intermediate phase with a high concentration of dangling bonds (up to 70%) is observed. The (1×1) to (2×1) phase transition is phenomenologically well described by a first-order transition provided a critical density of dangling bonds of about 70% is included in the analysis in such a way that the rate constant for reconstruction vanishes below that value.

© 1999 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevB.59.5847
DOI:
10.1103/PhysRevB.59.5847
PACS:
73.30.+y, 79.60.-i, 79.70.+q, 73.20.At