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APS » Journals » Phys. Rev. B » Volume 59 » Issue 23
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Phys. Rev. B 59, 15107–15111 (1999)

Far-field characteristics of random lasers

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H. Cao and Y. G. Zhao*
Department of Physics and Astronomy, Northwestern University, Evanston, Illinois 60208-3112

H. C. Ong and R. P. H. Chang
Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208

Received 19 November 1998; published in the issue dated 15 June 1999

We report on experimental observation of the far-field intensity and mode distributions of random lasers. Laser emission from highly disordered semiconductor polycrystalline thin films could be observed in all directions. The angle dependence of the laser output from the edge of the film is different from that of the laser emission scattered out of the surface of the film. More lasing modes are observed from the surface of the film than from the edge of the film. A qualitative explanation of the experimental results are presented based on the laser cavities formed by optical scattering being located in the plane of the films.

© 1999 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevB.59.15107
DOI:
10.1103/PhysRevB.59.15107
PACS:
42.55.Px, 42.70.Hj, 78.45.+h

*On leave from Department of Physics, Peking University, Beijing 100871, P.R. China.

 
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