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Phys. Rev. B 59, 9818–9821 (1999)

Interlayer coupling in ferromagnetic semiconductor superlattices

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T. Jungwirth
Department of Physics, Indiana University, Bloomington, Indiana 47405
Institute of Physics ASCR, Cukrovarnická 10, 162 00 Praha 6, Czech Republic

W. A. Atkinson, B. H. Lee, and A. H. MacDonald
Department of Physics, Indiana University, Bloomington, Indiana 47405

Received 20 January 1999; published in the issue dated 15 April 1999

We develop a mean-field theory of carrier-induced ferromagnetism in diluted magnetic semiconductors. Our approach represents an improvement over standard Ruderman-Kittel-Kesuya-Yosida model allowing spatial inhomogeneity of the system, free-carrier spin polarization, finite temperature, and free-carrier exchange and correlation to be accounted for self-consistently. As an example, we calculate the electronic structure of a MnxGa1-xAs/GaAs superlattice with alternating ferromagnetic and paramagnetic layers and demonstrate the possibility of semiconductor magnetoresistance systems with designed properties.

© 1999 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevB.59.9818
DOI:
10.1103/PhysRevB.59.9818
PACS:
75.50.Pp, 75.70.Cn, 73.61.Ey, 75.70.Pa